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december 2008 rev 3 1/13 13 STGW30N120KD 30 a - 1200 v - short circuit rugged igbt features low on-losses high current capability low gate charge short circuit withstand time 10 s igbt co-packaged with ultra fast free-wheeling diode application motor control description this igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STGW30N120KD gw30n120kd to-247 tube www.st.com
contents STGW30N120KD 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STGW30N120KD electrical ratings 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at 25 c 60 a i c (1) collector current (continuous) at 100 c 30 a i cl (2) 2. vclamp = 80% of v ces , t j =125 c, r g =10 ? , v ge =15 v turn-off latching current 100 a i cp (3) 3. pulse width limited by max. junction temperature allowed pulsed collector current 100 a v ge gate-emitter voltage 25 v t scw short circuit withstand time, v ce = 0.5 v (br)ces t j = 125 c, r g = 10 ?, v ge = 12 v 10 s p tot total dissipation at t c = 25 c 220 w i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 100 a t j operating junction temperature ? 55 to 125 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case igbt max. 0.45 c/w r thj-case thermal resistance junction-case diode max. 1.6 c/w r thj-amb thermal resistance junction-ambient igbt max. 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics STGW30N120KD 4/13 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, tc =125 c 2.8 2.7 3.85 v v v ge(th) gate threshold voltage v ce = v ge , i c = 1ma 4.5 6.5 v i ces collector cut-off current (v ge = 0) v ce =1200 v v ce =1200 v, tc=125 c 500 10 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 25 v , i c = 20 a 20 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge =0 2520 170 33 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 960 v, i c = 20 a,v ge =15 v 105 21 56 nc nc nc
STGW30N120KD electrical characteristics 5/13 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 36 22 840 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 35 22 760 ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 70 251 260 ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 140 324 432 ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 17 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as exter nal diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, (see figure 17) 2.4 4.3 6.7 mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 20 a r g = 10 ? , v ge = 15 v, tc= 125 c (see figure 17) 3.9 5.8 9.7 mj mj mj table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t c = 125 c 1.9 1.7 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, di/dt = 100 a/s (see figure 20) 84 235 5.6 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, tc = 125 c, di/dt = 100 a/s (see figure 20) 152 722 9 ns nc a
electrical characteristics STGW30N120KD 6/13 2.1 electrical char acteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs. temperature figure 6. gate charge vs. gate-source voltage figure 7. capacitance variations -5 05 10 15 20 25 3 0v ce (v) 0 3 0 60 90 120 i c (a) hv41160 14v 1 3 v 12v 11v 10v v ge =15v 036912 i c (a) 0 30 60 90 120 v ge (v) hv41165 v ce = 25v 0 20 40 60 8 0 100 qg(nc) 0 4 8 12 16 v ge (v) hv41190 v ce =960v i c =20a
STGW30N120KD electrical characteristics 7/13 figure 8. normalized gate threshold voltage vs. temperature figure 9. collector-emitter on voltage vs. collector current figure 10. normalized breakdown voltage vs. temperature figure 11. switching losses vs. temperature figure 12. switching losses vs. gate resistance figure 13. switching losses vs. collector current 0 5101520 0 1000 2000 3000 4000 hv41260 v cc = 780v v ge = 15v r g = 10 ? t j = 125?c eon eoff e (j) i c (a)
electrical characteristics STGW30N120KD 8/13 figure 14. thermal impedance figure 15. turn-off soa figure 16. forward voltage drop vs. forward current 0 10 20 3 0 40 50 60 70 8 0 9 0 100 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 i (a) fm v (v) fm t =25c (m a xim u m v a l u e s ) j t =150c (m a xim u m v a l u e s ) j t =150c (typic a l v a l u e s ) j
STGW30N120KD test circuit 9/13 3 test circuit figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform figure 20. diode recovery time waveform
package mechanical data STGW30N120KD 10/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
STGW30N120KD package mechanical data 11/13 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history STGW30N120KD 12/13 5 revision history table 9. document revision history date revision changes 29-jan-2008 1 initial release 18-jun-2008 2 update values in table 2 02-dec-2008 3 update p tot and r thj-case value (see table 2 and table 3 )
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